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| WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low R DS(ON) R DS(ON) <70 m @VGS =4.0V R DS(ON) <95 m @VGS =2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value 20 Unite V V A A A W C/W C + -8 2.8 12 1.25 1.25 100 -55 to 150 Device Marking WT2306=S06 WEITRON http://www.weitron.com.tw WT-2306 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current + VDS=0V, VGS=-8V Zero Gate Voltage Drain Current VDS=18V, VGS=0V Drain-Source On-Resistance VGS=4.0V, ID=2.8A VGS=2.5V, ID=2.0A Forward Transconductance VDS=7V, ID=5A 20 0.6 1.5 + -100 1 70 95 V V nA uA m - rDS (on) 5 gfs - S Dynamic (3) Input Capacitance VDS=10V, VGS=0V, f=1MHZ Output Capacitance VDS=10V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=10V, VGS=0V, f=1MHZ Ciss Coss Crss - 608 114 86 PF Switching (3) Turn-On Delay Time VGEN =4.5V,VDD =10V, I D=1A, R L =10 ,R GEN=10 Rise Time VGEN =4.5V,VDD =10V, I D=1A, R L =10 ,R GEN=10 Turn-Off Delay Time VGEN =4.5V,VDD =10V, I D=1A, R L =10 ,R GEN=10 Fall Time VGEN =4.5V,VDD =10V, I D=1A, R L =10 ,R GEN=10 Total Gate Charge VDS=10V, ID=1A, V GS =4.5V Gate-Source Charge VDS=10V, ID=1A, V GS=4.5V Gate-Drain Charge VDS=10V, ID=1A, V GS=4.5V Drain-Source Diode Forward Voltage VGS=0V, IS=1.25A Note: 1. Surface Mounted on FR4 Board t < 10sec. _ _ _ 2. Pulse Test : PW < 300us, Duty Cycle < 2%. 2. Guaranteed by Design, not Subject to Production Testing. td(on) tr td(off ) tf Qg Qgs Qgd - 10 14 39 26 9.2 1.6 2.6 0.84 - nS nS nS nS nc nc nc V - 1.3 VSD WEITRON http://www.weitron.com.tw WT-2306 10 VGS =3V I D ,DRAIN CURRENT(A) WE IT R ON 25 Tj =125 C ID , DRAIN CURRENT(A) 25 C 8 VGS =10,9,8,7,6,5,4V 6 VGS =2V 4 2 0 20 15 10 5 0 -55 C 1 2 3 4 5 6 0.0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-TO-SOURCE VOLTAGE(V) VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1100 C ,CAPACITANCE( P F) FIG.2 Transfer Characteristics 2.2 R DS(ON) , ON-RESISTANCE() 1.8 1.4 1.0 0.6 0.2 VGS =4V ID=3A 880 660 440 220 0 Crss 0 5 10 15 20 25 30 Ciss Coss 0 -50 -25 0 25 50 75 100 125 Tj ( C) VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Temperature 1.15 ID =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 VDS =VGS ID =250uA Vth ,NORMALIZED 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature WEITRON http://www.weitron.com.tw WT-2306 IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 20 10 18 gFS ,TRANSCONDUCTANCE(S) 15 12 9 6 3 VDS =7V 0 0 5 10 15 20 25 1 0 0.6 TJ=25 C 0.8 1.0 1.2 1.4 1.6 IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 50 ID , DRAIN CURRENT(A) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VDS =10V ID =1A 10 S RD (O L N) im it 1 1 1 100 0ms ms 1s DC 0.1 0.03 VGS=4.5V Single Pulse TC =25 C 0.1 1 10 20 50 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge FIG.10 Maximum Safe Operating Area V DD RL D VG S R GE N G V OUT ton td(on) V OUT tr 90% 10% toff td(off) 90% 10% tf V IN INVE R TE D 90% S V IN 50% 10% 50% PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms WEITRON http://www.weitron.com.tw WT-2306 WE IT R ON 10 NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 PDM t1 on 0.1 0.1 0.05 0.02 t2 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 0.01 0.00001 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 1000 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw WT-2306 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
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